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2SK3228
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1094-0400 Rev.4.00 May 15, 2006
Features
• Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Rev.4.00 May 15, 2006 page 1 of 7
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2SK3228
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
2SK3228 Datasheet
