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2SK3324 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SK3324 is N-Channel MOS FET device that

Key Features

  • a Low gate charge and excellent switching characteristics, and Designed for high voltage.

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Datasheet Details

Part number 2SK3324
Manufacturer Renesas
File Size 232.27 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet 2SK3324 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3324 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3324 PACKAGE TO-3P FEATURES • Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tstg Note2 Note2 900 ±30 ±6 ±18 120 3.