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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low C iss: C iss = 5450 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3814 2SK3814-Z
TO-251 (MP-3) TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC)
±60
A
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.
2SK3814 Datasheet
