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2SK3814 - N-CHANNEL POWER MOSFET

General Description

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A).
  • Low C iss: C iss = 5450 pF TYP.

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Datasheet Details

Part number 2SK3814
Manufacturer Renesas
File Size 166.11 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3814 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low C iss: C iss = 5450 pF TYP. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3814 2SK3814-Z TO-251 (MP-3) TO-252 (MP-3Z) (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ±60 A ID(pulse) ±240 A Total Power Dissipation (TC = 25°C) PT1 84 W Total Power Dissipation (TA = 25°C) PT2 1.