2SK4090 Datasheet | Renesas

DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. Features - Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) - Low gate to drain charge QGD = 6 nC TYP. (VDD = 15 V, ID = 30 A) - 4.5 V drive available - Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4090(1)-S27-AY Note 2SK4090-ZK-E1-AY Note 2SK4090-ZK-E2-AY Note LEAD PLATING Pure Sn...