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2SK4090 - MOSFET

General Description

The 2SK4090 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low gate to drain charge QGD = 6 nC TYP. (VDD = 15 V, ID = 30 A) • 4.