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2SK4144 - N-CHANNEL POWER MOSFET

General Description

The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • Low input capacitance Ciss = 5500 pF TYP. (VDS = 10 V).
  • Built-in gate protection diode.

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Datasheet Details

Part number 2SK4144
Manufacturer Renesas
File Size 261.41 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK4144 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ Note 2SK4144-S12-AZ Note LEAD PLATING Sn-Ag-Cu PACKING Vinyl bag 200 p/bag Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE Isolated TO-220 typ. 2.2 g FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low input capacitance Ciss = 5500 pF TYP.