Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4212A is N-channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features
- Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
- Low total gate charge QG = 24 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
- 4.5 V drive available
- Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK4212A-ZK-E1-AY Note 2SK4212A-ZK-E2-AY Note
LEAD PLATING Pure Sn...
