Datasheet4U Logo Datasheet4U.com

2SK4212A - N-CHANNEL POWER MOSFET

General Description

The 2SK4212A is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

📥 Download Datasheet

Datasheet Details

Part number 2SK4212A
Manufacturer Renesas
File Size 290.95 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK4212A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK4212A N-Channel MOSFET Transistor Inchange Semiconductor
2SK421 Silicon N-Channel MOSFET Toshiba
2SK4210 N-Channel Silicon MOSFET Sanyo
2SK4210 N-Channel MOSFET Transistor Inchange Semiconductor
2SK4213A N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK4212 MOSFET
2SK4213 MOSFET
2SK4213A N-CHANNEL POWER MOSFET
2SK4201 N-CHANNEL POWER MOSFET
2SK4202 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212A SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low total gate charge QG = 24 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4212A-ZK-E1-AY Note 2SK4212A-ZK-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode).