84N06CLD
Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A)
- Built-in gate protection diode
