84N06CLD Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
84N06CLD Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance
- Built-in gate protection diode
84N06CLD is N-CHANNEL POWER MOS FET manufactured by Renesas .
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.