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84N06CLD - N-CHANNEL POWER MOS FET

Description

designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A).
  • Built-in gate protection diode.

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Datasheet preview – 84N06CLD

Datasheet Details

Part number 84N06CLD
Manufacturer Renesas
File Size 122.22 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet 84N06CLD Datasheet
Additional preview pages of the 84N06CLD datasheet.

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    Full PDF Text Transcription

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    DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N06CLD, NP84N06DLD, NP84N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX.
    Published: |