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B1571 - 2SB1571

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • Low VCE(sat): VCE(sat)1 ≤.
  • 0.35 V.
  • Complementary to 2SD2402.

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DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −50 Collector to Emitter Voltage VCEO −30 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) Collector Current (pulse) Note1 IC(DC) IC(pulse) −5.0 −8.0 Base Current (DC) Base Current (pulse) Note1 Total Power Dissipation Note2 IB(DC) IB(pulse) PT −0.2 −0.4 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 16 cm2 x 0.7 mm V V V A A A A W °C °C PACKAGE DRAWING (Unit: mm) 4.5±0.1 1.6±0.2 1.5±0.1 0.8 MIN. 2.5±0.1 4.0±0.25 C EB 0.42 ±0.
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