Renesas Electronics BB504C
BB504C is individual type number of RENESAS BBFET.| Part No. | BB504C |
|---|---|
| Datasheet | BB504C Download |
| Manufacturer |  Renesas Electronics |
| Description | Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Low● Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
● High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
● Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
● Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “DS–”. 2. Rev.6.00 Aug 10, 2005 page 1 of 9 BB504C
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 30 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to s...
