Renesas Electronics BCR08AM
Triac
| Part No. | BCR08AM |
|---|---|
| Datasheet | BCR08AM Download |
| Manufacturer |  Renesas Electronics |
| Description | Triac |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 Voltage class 12 600 720 Symbol IT (RMS) ITSM Parameter RMS on-state current Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Peak gate voltage IGM Peak gate current Tj Junction temperature Tstg Storage temperature — Weight ✽1. Gate open. Conditions Commercial frequency, sine full wave 360° conduction, Tc=56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit V V Ratings Unit 0.8 A 8 A 0.26 A2s 1 W 0.1 W 6 V 0.5 A –40 ~ +125 °C –40 ~ +125 °C 0.23 g Mar. 2002 MITSUBISHI SEMICONDUCTOR <TRIAC> BCR08AM LOW POWER USE PLANAR PASSIVATION TYPEELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions IDRM VTM VRGT I VRGT III IRGT I IRGT III VGD Rth (j-c) (dv/dt)c Repetitive peak off-state current On-state volta...
