• Part: C2570A
  • Description: NPN EPITAXIAL SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 179.97 KB
Download C2570A Datasheet PDF
Renesas
C2570A
DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES - Low noise and high gain : NF = 1.5 d B TYP., Ga = 8 d B TYP. @ VCE = 10 V, IC = 5 m A, f = 1 GHz - Wide dynamic range : NF = 1.9 d B TYP., Ga = 9 d B TYP. @ VCE = 10 V, IC = 15 m A, f = 1 GHz ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity 500 pcs (Non reel) 2.5 kpcs/box (Box type) Supplying Form - 18 mm wide radial taping - Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 500 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current Total Power Dissipation IC P Note tot 70 600 m A m W Junction Temperature Tj °C Storage Temperature Tstg - 65 to +150 °C Note Free air Caution Observe precautions when handling because...