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C5336 - 2SC5336

Key Features

  • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2.
  • 4-pin power minimold package with improved gain from the 2SC3357.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number 2SC5336 2SC5336-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel • Magazine case • 12 mm wide embossed taping • Collector face the perforation side of the tape Supplying Form Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs.