C5480
Features
- High breakdown voltage VCES = 1500 V
- Isolated package TO- 3PFM
- Built-in damper diode
Outline
TO- 3PFM
C 2
1 B
3 E
2 3
1. Base 2. Collector 3. Emitter
..
2SC5480
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1. Value at Tc = 25° C Symbol VCES VEBO IC ic(peak) PC Tj Tstg ID
Note1
Ratings 1500 5 14 28 50 150
- 55 to +150 14
Unit V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO I CES h FE1 h FE2 Min 5
- 5 4
- -
- - Typ
- -
- -
- -
- 0.2 Max
- 500 25 7 5 1.5 2 0.4 V V V µs Unit V µA Test Conditions I E = 500m A, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 10A I C = 10A, IB = 2.5A I C = 10A, IB = 2.5A I F =...
