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C5751 - NPN SILICON RF TRANSISTOR

Datasheet Summary

Features

  • Ideal for medium output power amplification.
  • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm.
  • HFT3 technology (fT = 12 GHz) adopted.
  • High reliability through use of gold electrodes.
  • Flat-lead 4-pin thin-type super minimold package.

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Datasheet Details

Part number C5751
Manufacturer Renesas
File Size 131.78 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet C5751 Datasheet
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Full PDF Text Transcription

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5751 2SC5751-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs.
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