• Part: CT60AM-18F
  • Description: Insulated Gate Bipolar Transistor
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 72.81 KB
Download CT60AM-18F Datasheet PDF
Renesas
CT60AM-18F
Features - VCES : 900 V - IC : 60 A - Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL) 1 12 3 REJ03G1374-0200 (Previous: MEJ02G0023-0101) Rev.2.00 Jul 07, 2006 2, 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector Applications Microwave oven, Electromagnetic cooking devices, Rice-cookers Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg Ratings 900 ±25 ±30 60 120 40 180 - 40 to +150 - 40 to +150 (Tc = 25°C) Unit Conditions VGE = 0 V °C °C Rev.2.00 Jul 07, 2006 page 1 of 5 Electrical Characteristics Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output...