Renesas Electronics CT60AM-18F
Insulated Gate Bipolar Transistor
| Part No. | CT60AM-18F |
|---|---|
| Datasheet | CT60AM-18F Download |
| Manufacturer |  Renesas Electronics |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● VCES : 900 V● IC : 60 A
● Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL) 4 1 12 3 REJ03G1374-0200 (Previous: MEJ02G0023-0101) Rev.2.00 Jul 07, 2006 2, 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector 3
APPLICATIONS
Microwave oven, Electromagnetic cooking devices, Rice-cookersMAXIMUM RATINGS
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg Ratings 900 ±25 ±30 60 120 40 180 – 40 to +150 – 40 to +150 (Tc = 25°C) Unit Conditions V VGE = 0 V V V A A A W °C °C Rev.2.00 Jul 07, 2006 page 1 of 5 CT60AM-18FELECTRICAL CHARACTERISTICS
Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse tran...
