Datasheet Summary
DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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Document No. D17972EJ4V0DS00 (4th edition) (Previous No. TC-1369B) Date Published March 2006 NS CP(K) Printed in Japan c
TYPICAL CHARACTERISTICS (TA = 25°C)
2SD1006, 1007
2 Data Sheet D17972EJ4V0DS
2SD1006, 1007
Data Sheet D17972EJ4V0DS
2SD1006, 1007
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