D2403 Datasheet | Renesas

FEATURES - High current capacitance - Low collector saturation voltage - plementary transistor with 2SB1572 PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Base current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) IB(pulse) PT Tj Tstg Conditions PW ≤ 10 ms duty cycle ≤ 50 % PW ≤ 10 ms duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic board mounted Ratings 80 60 6.0 3.0 5.0 0.2 0.4 2.0 150 - 55 to +150 Unit V V V A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16156EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol I&%2 I(%2 h)( h)( V%( V&(VDW V&(VDW V%(VDW f7 CRE t RQ t VWJ t I Conditions V&% = 80 V, I( = 0 V(% = 6.0 V, I& = 0 V&( = 2.0 V, I& = 0.1 A V&( = 2.0 V, I& = 1.0 A V&( = 2.0 V, I& = 0.1 A I& = 2.0 A, I% = 0.1 A I& = 3.0 A, I% = 0.15 A I& = 2.0 A, I% = 0.1 A V&( = 10 V, I( = - 0.3 A V&% = 10 V, I( = 0, f = 1 MHz I& = 1.0 A, V&&= 10 V I% = - I% = 0.1 A R/ = 5.0 Ω h FE CLASSIFICATION Marking h)( GX 100 to 200 GY 160 to 320 GZ 200 to 400 2SD2403 MIN. 80 100...