DG412 - CMOS Analog Switches

Renesas

Download the DG412 datasheet PDF. This datasheet also covers the DG411 variant, as both devices belong to the same cmos analog switches family and are provided as variant models within a single manufacturer datasheet.

General Description

Logic Control for Switch 1.

Drain (Output) Terminal for Switch 1.

Source (Input) Terminal for Switch 1.

Key Features

ON-Resistance (Max).
35.
Low Power Consumption (PD).
.

📥 Download Datasheet

DG412 cmos analog switches by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (DG411-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	DG412
Manufacturer	Renesas
File Size	745.19 KB
Description	CMOS Analog Switches
Datasheet	DG412 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DG412	Monolithic Quad SPST / CMOS Analog Switches	Intersil Corporation
DG412	SPST Analog Switches	Maxim Integrated
DG412	Precision Monolithic Quad SPST CMOS Analog Switches	Vishay
DG412F	SPST Analog Switches	Maxim Integrated
DG412HS	Precision Monolithic Quad SPST CMOS Analog Switches	Vishay

Other Datasheets by Renesas

Part Number	Description
DG411	CMOS Analog Switches
DG413	CMOS Analog Switches
DG406	CMOS Analog Multiplexers
DG407	CMOS Analog Multiplexers
DG444	CMOS Analog Switches

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DG411, DG412, DG413 Monolithic Quad SPST, CMOS Analog Switches The DG411 series monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole throw (SPST) analog switches, and TTL and CMOS compatible digital inputs. These switches feature lower analog ON-resistance (<35) and faster switch time (tON<175ns) compared to the DG211 or DG212. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG411 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 40VP-P signals.