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DG445 - CMOS Analog Switches

Download the DG445 datasheet PDF. This datasheet also covers the DG444 variant, as both devices belong to the same cmos analog switches family and are provided as variant models within a single manufacturer datasheet.

General Description

PIN SYMBOL DESCRIPTION 1 IN1 Logic Control for Switch 1 2 D1 Drain (Output) Terminal for Switch 1 3 S1 Source (Input) Terminal for Switch 1 4 V- Negative Power Supply Terminal 5 GND Ground Terminal (Logic Common) 6 S4 Source (Input) Terminal for Switch 4 7 D4 Drain (Output) Te

Key Features

  • ON Resistance (Max).
  • 85.
  • Low Power Consumption (PD).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DG444-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DG445
Manufacturer Renesas
File Size 596.38 KB
Description CMOS Analog Switches
Datasheet download datasheet DG445 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DG445 Monolithic / Quad SPST / CMOS Analog Switches Intersil Corporation
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DG441 SPST Analog Switches Maxim Integrated
DG441 Monolithic / Quad SPST / CMOS Analog Switches Intersil Corporation

Other Datasheets by Renesas

Part Number Description
DG444 CMOS Analog Switches
DG406 CMOS Analog Multiplexers
DG407 CMOS Analog Multiplexers
DG411 CMOS Analog Switches
DG412 CMOS Analog Switches

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DG444, DG445 Monolithic, Quad SPST, CMOS Analog Switches The DG444 and DG445 monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole single throw (SPST) analog switches and TTL and CMOS compatible digital inputs. These switches feature lower analog ON resistance (<85) and faster switch time (tON <250ns) compared to the DG211 and DG212. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG444 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 20V signals when operating with 20V power supplies.