F1958 Datasheet | Renesas

Description The F1958 is part of the Renesas Glitch-Free TM family of DSAs optimized for the demanding requirements of Base Station (BTS) radio cards and numerous other applications. This device is offered in a pact 4 x 4 mm 24-pin package with 50Ω input and output impedance for ease of integration into the radio or RF system. The F1958 offers very high reliability due to its construction from a monolithic silicon die in a QFN package. The insertion loss is very low with minimal distortion. Additionally, the device is designed to have extremely accurate attenuation levels. These accurate attenuation levels improve system SNR and/or ACLR by ensuring system gain is as close to the targeted level as possible. In addition, the very fast settling time in parallel mode is ideal for fast switching systems. The device uses Renesas’ Glitch-Free TM technology in contrast to peting DSAs. petitive Advantage - Lowest insertion loss for best SNR - Glitch-Free TM technology to protect power amplifiers or ADC during transitions between attenuation states - Extremely accurate attenuation levels - Ultra-low distortion - MSL1 and 2000 V HBM ESD Typical Applications - 3G/4G/4G+ Base Station Systems - Distributed Antenna Systems, DAS - Remote Radio Heads - Active Antenna Systems, AAS Broadband Satellite Equipment - NFC Infrastructure - Military munication Equipment VD D VMODE D[6:0] DATA CLK LE Features - Serial and 7-bit parallel interface - 31.75d B range - 0.25d B steps - Glitch-Free TM: low transient overshoot - 500ns settling time for 0.25d B steps - Ultra linear > 63d Bm IIP3 - Low insertion loss < 1.7d B at 4GHz - Attenuation error < ±0.2d B at 4GHz - Bi-directional RF use - 3.3V or 5V supply - -40°C to +105°C operating temperature - 4 x 4 mm thin 24-QFN package Block Diagram Figure 1. Block Diagram RF1 G l i tc h - Fr e e TM RF2 Bias Decoder © 2018-2022 Renesas Electronics...