Renesas Electronics FL7KM-12A
POWER MOSFET
| Part No. | FL7KM-12A |
|---|---|
| Datasheet | FL7KM-12A Download |
| Manufacturer |  Renesas Electronics |
| Description | POWER MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 7 21 7 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Sep. 2001 L = 200µH AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE (Tch = 25°C)ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ± 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 1.1 3.3 5.0 950 115...
