• Part: FS10ASJ-06F
  • Description: N-channel Power MOS FET
  • Manufacturer: Renesas
  • Size: 96.63 KB
Download FS10ASJ-06F Datasheet PDF
FS10ASJ-06F page 2
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FS10ASJ-06F page 3
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Datasheet Summary

High-Speed Switching Use Nch Power MOS FET Features - Drive voltage : 4 V - VDSS : 60 V - rDS(ON) (max) : 70 mΩ - ID : 10 A - Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 12 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg - Ratings 60 ±20 10 40 10 10 40...