FS10ASJ-06F Description
FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET.
FS10ASJ-06F Key Features
- Drive voltage : 4 V
- VDSS : 60 V
- rDS(ON) (max) : 70 mΩ
- ID : 10 A
- Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns
FS10ASJ-06F Datasheet
| Part number | FS10ASJ-06F |
|---|---|
| Download | FS10ASJ-06F Datasheet (PDF) |
| File Size | 96.63 KB |
| Manufacturer | Renesas |
| Description | N-channel Power MOS FET |
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