Renesas Electronics FS20VSJ-3
Pch Power MOSFET
| Part No. | FS20VSJ-3 |
|---|---|
| Datasheet | FS20VSJ-3 Download |
| Manufacturer |  Renesas Electronics |
| Description | Pch Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Drive voltage : 4 V● VDSS : – 150 V
● rDS(ON) (max) : 0.29 Ω
● ID : – 20 A
● Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4
APPLICATIONS
Motor control, lamp control, solenoid control, DC-DC converters, etc.MAXIMUM RATINGS
(Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –150 ±20 –20 –80 –20 –20 –80 70 – 55 to +150 – 55 to +150 1.2 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 30 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FX20VSJ-3ELECTRICAL CHARACTERISTICS
(Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state...
