Renesas Electronics FS25SM-9A
Power MOSFETs
| Part No. | FS25SM-9A |
|---|---|
| Datasheet | FS25SM-9A Download |
| Manufacturer |  Renesas Electronics |
| Description | Power MOSFETs |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings 450 ±30 25 75 25 200 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A W °C °C g Sep. 2001 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200µH Maximum power dissipation Channel temperature Storage temperature Weight Typical value MITSUBISHI Nch POWER MOSFET FS25SM-9A HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V IG = ± 100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ± 30 — — 2.5 — — 15.6 — — — — — — — — — Typ. — — — — 3.0 0.13 1.56 26.0 4600 500 100 60 100 630 140 1.5 — Max. — — ± 10 1 3.5 0...
