Datasheet Summary
High-Speed Switching Use Nch Power MOS FET
REJ03G0278-0100 Rev.1.00 Aug.20.2004
Features
- -
- - Drive voltage : 10 V VDSS : 300 V rDS(ON) (max) : 0.105 Ω ID : 40 A
Outline
TO-3P
4 2, 4
1. 2. 3. 4.
Gate Drain Source Drain
3 3
Applications
Switching mode power supply, plasma display TVs, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM PD Tch Tstg
- Ratings 300 ±30 40 120 250
- 55 to +150
- 55 to +150 4.8 Unit V V A A W °C °C g Conditions VGS = 0 V VDS = 0 V
Typical value
Rev.1.00,...
