Renesas Electronics FS50ASJ-03F
N-channel MOSFET
| Part No. | FS50ASJ-03F |
|---|---|
| Datasheet | FS50ASJ-03F Download |
| Manufacturer |  Renesas Electronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drive Voltage : 4V● VDSS : 30 V
● rDS(ON) (max) : 12.2 mΩ
● ID : 50 A
● Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3
APPLICATIONS
Motor control, lamp control, solenoid control, DC-DC converters, etc.MAXIMUM RATINGS
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 30 ±20 50 200 50 50 200 50 – 55 to + 150 – 55 to + 150 0.32 REJ03G0238-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Unit V V A A A A A W °C °C g (Tc = 25 °C) Conditions VGS = 0 V VDS = 0 V L = 6 µH Typical value REJ03G0238-0200 Rev.2.00 Dec 19, 2008 Page 1 of 6 FS50ASJ-03FELECTRICAL CHARACTERISTICS
Parameter Drain-source breakdown voltage Gate-source breakdown voltage...
