Renesas Electronics FS50SM-5A
N-channel MOSFET
FEATURES
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● Drive voltage : 10 V VDSS : 250 V rDS(ON) (max) : 0.068 Ω ID : 50 A Outline TO-3P 4 2, 4 1 1 2 3 3
APPLICATIONS
Switching mode power supply, plasma display TVs, DC-DC converters, etc.MAXIMUM RATINGS
(Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM PD Tch Tstg — Ratings 250 ±30 50 150 250 – 55 to +150 – 55 to +150 4.8 Unit V V A A W °C °C g Conditions VGS = 0 V VDS = 0 V Typical value Rev.1.00, Aug.20.2004, page 1 of 6 1. 2. 3. 4. Gate Drain Source Drain FS50SM-5AELECTRICAL CHARACTERISTICS
(Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay...