Renesas Electronics FS5ASJ-06F
N-channel Power MOS FET
| Part No. | FS5ASJ-06F |
|---|---|
| Datasheet | FS5ASJ-06F Download |
| Manufacturer |  Renesas Electronics |
| Description | N-channel Power MOS FET |
| Buy | Stock & Price |
FEATURES
● Drive voltage : 4 V● VDSS : 60 V
● rDS(ON) (max) : 140 mΩ
● ID : 5 A
● Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3
APPLICATIONS
Motor control, lamp control, solenoid control, DC-DC converters, etc.MAXIMUM RATINGS
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 5 20 5 5 20 15 – 55 to +150 – 55 to +150 0.32 REJ03G0239-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value REJ03G0239-0200 Rev.2.00 Dec 19, 2008 Page 1 of 6 FS5ASJ-06FELECTRICAL CHARACTERISTICS
Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-so...
