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FX20ASJ-03F Datasheet PDF

Renesas Electronics FX20ASJ-03F

P-channel Power MOS FET

Part No. FX20ASJ-03F
Datasheet FX20ASJ-03F Download
Manufacturer
Renesas Electronics
Description P-channel Power MOS FET
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FX20ASJ-03F datasheet page 1 preview

FEATURES

● Drive voltage : 4 V
● VDSS : – 30 V
● rDS(ON) (max) : 0.12 Ω
● ID : – 20 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 3 12 3 1 2, 4

APPLICATIONS

Motor control, lamp control, solenoid control, DC-DC converters, etc.

MAXIMUM RATINGS

Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –30 ±20 –20 – 40 –5 –20 – 40 25 – 55 to +150 – 55 to +150 0.32 REJ03G0248-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value REJ03G0248-0200 Rev.2.00 Dec 19, 2008 Page 1 of 3 FX20ASJ-03F

ELECTRICAL CHARACTERISTICS

Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Ga...
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