FX30ASJ-03
FX30ASJ-03 is Pch Power MOS FET manufactured by Renesas.
Features
- Drive voltage : 4 V
- VDSS :
- 30 V
- r DS(ON) (max) : 61 mΩ
- ID :
- 30 A
- Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A)
12 3
3 2, 4
REJ03G1445-0200 (Previous: MEJ02G0266-0101)
Rev.2.00 Aug 07, 2006
1. Gate 2. Drain 3. Source 4. Drain
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
- Ratings
- 30 ±20
- 30
- 120
- 30
- 30
- 120 35
- 55 to +150
- 55 to +150
Unit V V A A A A A W °C °C g
(Tc = 25°C)
Conditions VGS = 0 V VDS = 0 V
L = 10 µH
Typical value
Rev.2.00 Aug 07, 2006 page 1 of...
