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FX30ASJ-03 - Pch Power MOS FET

Key Features

  • Drive voltage : 4 V.
  • VDSS :.
  • 30 V.
  • rDS(ON) (max) : 61 mΩ.
  • ID :.
  • 30 A.
  • Integrated Fast Recovery Diode (TYP. ) : 50 ns Outline.

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Other Datasheets by Renesas

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FX30SMJ-3 Pch Power MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.