Renesas Electronics FY8AAJ-03F
High-Speed Switching Use Nch Power MOS FET
| Part No. | FY8AAJ-03F |
|---|---|
| Datasheet | FY8AAJ-03F Download |
| Manufacturer |  Renesas Electronics |
| Description | High-Speed Switching Use Nch Power MOS FET |
| Buy | Stock & Price |
FEATURES
● Drive voltage : 4 V● VDSS : 30 V
● rDS(ON) (max) : 28 mΩ
● ID : 8 A Outline SOP-8 5,6,7,8 5 8 4 1 4 1,2,3. Source 4. Gate 5,6,7,8. Drain 1,2,3
APPLICATIONS
Motor control, lamp control, solenoid control, DC-DC converters, etc.MAXIMUM RATINGS
(Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 30 ±20 8 56 8 1.5 6.0 1.7 – 55 to +150 – 55 to +150 0.07 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FY8AAJ-03FELECTRICAL CHARACTERISTICS
(Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance D...
