Renesas Electronics H5N1506P
Silicon N Channel MOS FET High Speed Power Switching
| Part No. | H5N1506P |
|---|---|
| Datasheet | H5N1506P Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel MOS FET High Speed Power Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 150 ±30 98 294 98 294 48 172 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.2.00 Jul 03, 2006 page 1 of 6 H5N1506PELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to S...
