Renesas Electronics H5N2001LM
Silicon N-Channel MOSFET
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H5N2001LD H5N2001LS D RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G 1 2 3 S H5N2001LM Rev.6.00 Jul 14, 2006 page 1 of 7 H5N2001LD, H5N2001LS, H5N2001LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Ratings 200 ±30 20 80 20 80 20 75 1.67 150 –55 to +150 Unit V V A...