Renesas Electronics H5N2003P
Silicon N-Channel MOSFET
| Part No. | H5N2003P |
|---|---|
| Datasheet | H5N2003P Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Pch Note2 θch-c Tch Tstg Note3 Ratings 200 ±30 60 240 60 240 40 150 0.833 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.1.00, Apr.09.2004, page 1 of 6 H5N2003PELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input...
