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H5N2005DL Datasheet PDF

Renesas Electronics H5N2005DL

MOSFET

Part No. H5N2005DL
Datasheet H5N2005DL Download
Manufacturer
Renesas Electronics
Description MOSFET
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H5N2005DL datasheet page 1 preview

FEATURES

● Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
● Low drive power
● High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain

ABSOLUTE MAXIMUM RATINGS

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse) Note 1 IAPNote3 Pch Note 2
●ch-c Tch Tstg Valu
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