Datasheet4U Logo Datasheet4U.com

H5N2005DS - MOSFET

Download the H5N2005DS datasheet PDF. This datasheet also covers the H5N2005DL variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C).
  • Low drive power.
  • High speed switching Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H5N2005DL-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
H5N2005DS Silicon N Channel MOS FET High Speed Power Switching Hitachi Semiconductor
H5N2005DL Silicon N Channel MOS FET High Speed Power Switching Hitachi Semiconductor
H5N2001LD Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
H5N2001LM Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
H5N2001LS Silicon N Channel MOS FET High Speed Power Switching Renesas Technology

Other Datasheets by Renesas

Part Number Description
H5N2005DL MOSFET
H5N2509P Silicon N-Channel MOSFET
H5N2901FL-M0 MOSFET
H5N5005PL Silicon N-Channel MOS FET
H5N5006FM Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07, 2012 Features  Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power  High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.