Renesas Electronics H5N2005DS
MOSFET
FEATURES
● Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)● Low drive power
● High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse) Note 1 IAPNote3 Pch Note 2●ch-c Tch Tstg Valu