Renesas Electronics H5N2501LD
Silicon N-Channel MOSFET
| Part No. | H5N2501LD |
|---|---|
| Datasheet | H5N2501LD Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) 4 1 1 2 3 1 2 2 H5N2501LS 3 3 H5N2501LD D H5N2501LM G 1. Gate 2. Drain 3. Source 4. Drain S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Pch Note2 Tch Tstg Note3 Ratings 250 ±30 18 72 18 18 75 150 –55 to +150 Unit V V A A A A W °C °C Rev.2.00, Jul.21.2005, page 1 of 4 H5N2501LD, H5N2501LS, H5N2501LMELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain...
