Renesas Electronics H5N2502CF
Silicon N-Channel MOSFET
| Part No. | H5N2502CF |
|---|---|
| Datasheet | H5N2502CF Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High Speed Switching Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse) Note 1 IAP Note 3 Pch Note 2 θch-c Tch Tstg Ratings 250 ±30 18 72 18 72 18 35 3.57 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.1.00, Nov.26.2004, page 1 of 3 H5N2502CFELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capa...
