Renesas Electronics H5N2504DS
Silicon N-Channel MOSFET
FEATURES
● Low● Low on-resistance leakage current
● High speed switching
● Low gate charge
● Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 4 D RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 G 3 S 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2504DL, H5N2504DS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±20 7 28 7 28 7 30 4.17 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdow...