Renesas Electronics H5N2505DS
Silicon N-Channel MOSFET
| Part No. | H5N2505DS |
|---|---|
| Datasheet | H5N2505DS Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High speed switching
● Low gate change
● Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) G 1 2 3 S 1 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 250 ±30 5 20 5 20 5 25 5 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.3.00 Oct 16, 2006 page 1 of 7 H5N2505DL, H5N2505DSELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source br...
