Renesas Electronics H5N2508DL
Silicon N-Channel MOSFET
| Part No. | H5N2508DL |
|---|---|
| Datasheet | H5N2508DL Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low● Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
● High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
● Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)
● Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2508DL, H5N2508DS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±30 7 28 7 28 7 30 4.17 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1.
