Renesas Electronics H5N2510DL
Silicon N-Channel MOSFET
| Part No. | H5N2510DL |
|---|---|
| Datasheet | H5N2510DL Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low● Low on-resistance drive current
● High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 4 H5N2510DL, H5N2510DS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±20 5 20 5 20 25 5 150 –55 to +150 Unit V V A A A A W °C/W °C °C IDR (pulse) Note 2 Pch θ ch-c Tch Tstg Note 1 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff...
