Renesas Electronics H5N2519P
Silicon N Channel MOS FET High Speed Power Switching
| Part No. | H5N2519P |
|---|---|
| Datasheet | H5N2519P Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel MOS FET High Speed Power Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 250 ±30 65 195 65 22 30.2 150 0.833 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Rev.2.00 Nov. 19, 2004 page 1 of 6 H5N2519PELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output...
