Renesas Electronics H5N2522FN
Silicon N Channel MOS FET High Speed Power Switching
| Part No. | H5N2522FN |
|---|---|
| Datasheet | H5N2522FN Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N Channel MOS FET High Speed Power Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 12 48 12 48 12 9 35 3.57 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1573-0210 Rev.2.10 May 08, 2007 Page 1 of 6 H5N2522FNELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to...
