Renesas Electronics H5N2901FN
Silicon N-Channel MOSFET
| Part No. | H5N2901FN |
|---|---|
| Datasheet | H5N2901FN Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 290 ±30 18 72 18 72 6 2.1 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.1.00, May.28.2004, page 1 of 7 H5N2901FNELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain...
