Renesas Electronics H5N3003P
N-Channel MOSFET
| Part No. | H5N3003P |
|---|---|
| Datasheet | H5N3003P Download |
| Manufacturer |  Renesas Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High Speed Switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 H5N3003P
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 Note1 Ratings 300 ±30 40 160 40 160 30 150 0.833 150 –55 to +150 Unit V V A A A A A W °C /W °C °C θch-c Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.2.00, Aug.01.2003, page 2 of 9 H5N3003PELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 300 — — 3.0 20 — — — — — — — — — — — — — — Typ — — — — 35 0.058 5150 560 90 60 185 220 150 130 25 60 1.0 280 2.5 Max — 1 ±0.1 4.0 — Unit V µA µA...
