Renesas Electronics H5N3004P
N-Channel MOSFET
| Part No. | H5N3004P |
|---|---|
| Datasheet | H5N3004P Download |
| Manufacturer |  Renesas Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching
● Low gate charge (Qg)
● Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAPNote Pch 3 Note1 Note1 Ratings 300 ±30 25 100 25 100 25 150 0.833 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Note2 θch-c Tch Tstg Rev.0, Apr. 2002, page 2 of 2 H5N3004PELECTRICAL CHARACTERISTICS
(Ta=25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Stat...
