Renesas Electronics H5N3005LD
Silicon N-Channel MOSFET
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 4 RENESAS Package code: PRSS0004AE-C (Package name LDPAK(S)-(2)) 4 1 1 2 3 1 2 2 H5N3005LS 3 3 H5N3005LD D H5N3005LM G 1. Gate 2. Drain 3. Source 4. Drain S Rev.4.00, Nov 08, 2005, page 1 of 4 H5N3005LD, H5N3005LS, H5N3005LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 300 ±30 15 60 15 60 15 13.5 75 1.67 150...