Renesas Electronics H5N3007CF
N-Channel MOSFET
| Part No. | H5N3007CF |
|---|---|
| Datasheet | H5N3007CF Download |
| Manufacturer |  Renesas Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) IDR Note 1 IDR(pulse) Note 3 IAP Pch Note 2 θch-c Tch Tstg Note 1 Ratings 300 ±30 15 60 15 60 15 35 3.57 150 –55 to +150 Unit V V A A A A A W °C/W °C °C Rev.1.00, Nov.11.2004, page 1 of 3 H5N3007CFELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward...
