Renesas Electronics H5N5012P
Silicon N-Channel MOSFET
| Part No. | H5N5012P |
|---|---|
| Datasheet | H5N5012P Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching
● Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAPNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 500 ±30 25 100 25 7 150 0.833 150 –55 to +150 Unit V V A A A A W °C/W °C °C Rev.2.00, Jun.17.2004, page 1 of 3 H5N5012PELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capac...
